N. Y. A. SHAMMAS, M. P. RODRIGUEZ, F. MASANA, "A simple method for evaluating the transient thermal response of semiconductor devices", Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp. 109-117.

N. Y. A. SHAMMAS, M. P. RODRIGUEZ, F. MASANA, "A simple method for evaluating the transient thermal response of semiconductor devices", Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp. 109-117. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART238]

Titre : N. Y. A. SHAMMAS, M. P. RODRIGUEZ, F. MASANA, A simple method for evaluating the transient thermal response of semiconductor devices, Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp. 109-117.

Cité dans :[REVUE281] Elsevier Science, Microelectronics Reliability, Volume 42, Issue 1, Pages 1-156, January 2002.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.

Auteur : N. Y. A. Shammas (a)
Auteur : M. P. Rodriguez (a)
Auteur : F. Masana (b)

Vers : Bibliographie
Adresse : (a) School of Engineering and Advanced Technology, Staffordshire University, Beaconside, P.O. Box 333, Stafford ST18 0DF, UK
Adresse : (b) GDS-DEE Polytechnic University of Catalonia, Avda. Gregorio Maranon s/n, 08028 Barcelona, Spain
Tel. : +44-01785-353474
Fax. : +44-01785-353552
Lien : mailto:n.y.a.shammas@staffs.ac.uk
Source : Microelectronics Reliability
Volume : 42
Issues : 1
Date : January 2002
Pages : 109 - 117
DOI : 10.1016/S0026-2714(01)00229-3
PII : S0026-2714(01)00229-3
Lien : private/SHAMMAS1.pdf - 236 Ko, 9 pages.
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Abstract :
In this paper, a simple experimental method for the transient thermal
characterisation of semiconductor packages is presented. The method is based
upon the assumption that in many cases, device temperature evolution can be
accurately described by a few exponential terms, as will be shown to be the case
when transient thermal response has widely separated time constants.
The proposed method, begins with the experimental determination of transient
thermal response followed by numerical extraction of the time constants and
amplitudes for the significant exponential terms, and is applied to a number of
commercial Smartpack® modules in order to obtain a dynamic model that can be
used in circuit and numerical simulators, in order to predict the dynamic
thermal behaviour of the device under any working condition.

Article Outline
1. Introduction
2. Theory
3. Model parameters calculation
4. Experimental arrangement
5. Results and discussion
6. Conclusions

Bibliographie

Références : 14
[1] : High Power IGBT handbook, GEC Plessey Semiconductors (now Dynex Semiconductors), August 1996.
[2] : R.L. Pritchard Electrical characteristics of transistors, McGraw-Hill, New York (1967) [Chapter 9] .
[3] : W.E. Newell , Transient thermal analysis of solid-state power devices--making a dreaded process easy. IEEE Transactions on Industry Applications 12 4 (1976).
[4] : E.J. Diebold and W. Luft , Transient thermal impedance of semiconductor devices. AIEE Transactions 79 (1961), p. 719.
[5] : J.W. Sofia , Analysis of thermal transient data with synthesised dynamic models for semiconductor devices. IEEE Transactions on Components Packaging and Manufacturing Technology-Part A 18 1 (1995).
[6] : E. Farjah et al., Experimental thermal parameter extraction using non-destructive tests. EPE'95 Conference Proceedings (Sevilla) 1 (1995), pp. 245-248.
[7] : V. Székely , A new evaluation method of thermal transient measurement results. Microelectronics Journal 28 (1997), pp. 277-292.
[8] : P.E. Bagnoli, C. Casarosa et al., Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices. Thermal characterisation-Part I: Fundamental and theory. IEEE Transactions on Power Electronics 13 6 (1998), pp. 1208-1219.
[9] : E.A. Guillemin Synthesis of passive networks, Wiley, New York (1957).
[10] : Székely V. Distributed RC networks. In: Chen W, editor. The circuits and filters handbook. CRC Press and IEEE Press; 1995. p. 1203-21 [Chapter 42].
[11] : F.N. Masana Thermal characterisation of power modules. Microelectronics Reliability 40 (2000), pp. 155-161.
[12] : F.N. Masana , A new approach to the dynamic thermal modelling of semiconductor packages. Microelectronics Reliability 41 6 (2001), pp. 903-914.
[13] : Masana FN, Hinchley DA, et al. The Smartpack, a low cost high performance solution for power packaging. Proceedings of the IEE Colloquium on Recent Advances in Power Devices, June 1999.
[14] : SmartPack is a registered trademark of SMARTPACK TECNOLOGIA S.A. under Patent no. P9302702.

  [1] :  [ART575]  P.E. BAGNOLI, C. CASAROSA, M. CIAMPI, E. DALLAGO, Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory, IEEE Transactions on Power Electronics, Vol. 13, N

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