P. COVA, M. CIAPPA, G. FRANCESCHINI, P. MALBERTI, F. FANTINI, "Thermal characterization of IGBT power modules", Microelectronics Reliability, Vol. 37, Issues 10-11, October 1997, pp. 1731-1734.

P. COVA, M. CIAPPA, G. FRANCESCHINI, P. MALBERTI, F. FANTINI, "Thermal characterization of IGBT power modules", Microelectronics Reliability, Vol. 37, Issues 10-11, October 1997, pp. 1731-1734. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART218]

Titre : P. COVA, M. CIAPPA, G. FRANCESCHINI, P. MALBERTI, F. FANTINI, Thermal characterization of IGBT power modules, Microelectronics Reliability, Vol. 37, Issues 10-11, October 1997, pp. 1731-1734.

Cité dans :[REVUE199] Elsevier Science, Microelectronics Reliability, Vol. 37, Issues 10-11, Pages 1421-1798, 11 October 1997.
Cité dans :[PAP409]
Cité dans :[PAP404]
Cité dans :[ART227]

Auteur : P. Cova (1)
Auteur : M. Ciappa (2)
Auteur : G. Franceschini (1)
Auteur : P. Malberti (2)
Auteur : F. Fantini (1)

Adresse : (1) University of Parma, Dipartimento di Ingegneria dell'Informazione, Viale delle Scienze 43100 Parma Italy
Adresse : (2) Swiss Federal Institute of Technology (ETH), Reliability Laboratory, ETH-Zentrum CH-8092 Zurich Switzerland

Vers : Bibliographie
Lien : PAP409.HTM#Bibliographie - référence [1].
Lien : PAP404.HTM#Bibliographie - référence [10].
Lien : ART227.HTM#Bibliographie - référence [1].

Source : Microelectronics and Reliability
Volume : 37
Issues : 10-11
Date : 11 October 1997
Pages : 1731 - 1734
PII : S0026-2714(97)00150-9
Lien : private/COVA3.pdf - 220 Ko, 4 pages.

Abstract :
In this paper we report on experimental techniques for the thermal characterization of IGBT power modules. Three different systems have been used: the first one performs "in-time" characterization in order to control the most significant device parameters during normal operation or stress tests; the second one is for a complete and dynamic thermal characterization; finally, infrared optical analysis has been performed to validate the results.

Index_Terms : Bipolar transistors; Power electronics; Thermal effects; Thermal stress; Optical testing; Temperature measurement; Heat resistance; Gates (transistor); Transients; IGBT power modules; Temperature sensitive parameter; Thermal time constant; Infrared optical analysis; Saturation voltage

This paper was partly supported by the BRITE Project RAPSDRA.

  [1] :  [DIV339]  BE 95-2105, RAPSDRA: Reliability of Advanced Power Semiconductors for Railway Traction Applications.

Bibliographie

References : 3
[1] : H. Brunner et al., 3300V IGBT module for traction application, Proc. of 6th Power Electronics and Applications (EPE), Sevilla, 1.056-1.059 (1995).
[2] : F.F. Oettinger et al., Thermal characterization of power transistors, IEEE Trans. Electron Dev., ED-23, 831-838 (1976).
[3] : B.J. Baliga, Temperature behavior of insulated gate transistor characteristics, Solid State Elect., 28, 289-297 (1985).

  [1] :  [PAP158]  -------
  [2] :  [PAP158]  -------
  [3] :  [PAP158]  -------

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